Silicon Trench Detectors
Silicon trench detectors are a form of P-I-N photodiodes in which the
light collecting junctions are formed along the side of deep
parallel trenches. Because the carriers transit between the trenches
the detectors can be very fast in spite of the long absorbtion depths
required in silicon.
- “Method for Fabricating Avalanche
Trench Photodetectors”, D.L. Rogers,
Min Yang, Mar 16,2004, #6,707,075.
Insulator Lateral P-I-N Photodetector with a Reflecting
Mirror and Backside Contact and Method for Forming the Same”, D.L.
Rogers et.al., Dec 23, 2003, #6,667,528.
Trench Photodiode”, D.L. Rogers et.al. ,Mar 25,2003,
- “Lateral Trench
Optical Detectors”, D.L. Rogers, Jan 23, 2001, #6,177,289.
- D.L. Rogers, “The Silicon
Lateral Trench Detector in Multi-Gb/s Receiver Systems”, Proc. IEEE/LEOS Annual Meeting, pp. 679-680, 2002.